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16 February 2017 512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes
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InAs/GaSb superlattice light-emitting diodes are a promising technology for progressing the state-of-the art infrared scene projectors. By targeting a specific band of interest, they are able to achieve apparent temperatures greater than that of conventional resistor arrays and settling times on the order of nanoseconds. We report the fabrication of a dual-color infrared InAs/GaSb superlattice light-emitting diode array for operation in the mid-wave infrared. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual-color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. At 77K, the emitted wavelengths are in the 3.2-4.2μm and 4.2-5.2μm range, with peak wavelengths at 3.81μm and 4.72μm. Using photolithography and wet etching, a 512×512 array of 48μm-pitch pixels were fabricated and hybridized to a silicon read-in integrated circuit. Test arrays with an 8×8 matrix of pixels demonstrated greater than 2 W/cm2˙sr for the 4.7μm emitter and greater than 5W/cm2˙sr for the 3.8μm emitter; the lower radiance in the long-wave emitter is due to a small active region volume left after fabrication. These respectively correspond to apparent temperatures greater than 1400K and 2000K in the 3-5μm band including fill factor.
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Russell J. Ricker, Sydney Provence, Lee M. Murray, Dennis T. Norton, Jonathon T. Olesberg, John P. Prineas, and Thomas F. Boggess "512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101241L (16 February 2017); doi: 10.1117/12.2258468;

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