28 January 2017 High-power InGaAs/InP MUTC photodetector modules for RF photonics links and ROF
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Abstract
High-performance photodetectors (HPPDs), with high output power and bandwidth, are needed for RF photonics links. Applications for these HPPDs range from high-power remote antennas, low-duty-cycle RF pulse generation, linear photonic links, high dynamic range optical systems, and radio-over-fiber (ROF). Freedom Photonics is a manufacturer of high-power photodetectors (HPPD) for the 1480 to 1620nm wavelength range, now being offered commercially. In 2016, Freedom has developed a HPPD for similar applications extending into the V-band. The basic device structure used for these photodetectors can achieve over 100-GHz bandwidths with slight variations. This work shows data for RF power and bandwidth performance for various size photodiodes, between 10 μm and 28 μm in diameter. Measurement data will be presented, which were collected at both assembly level and for fully packaged detectors. For detector devices with bandwidth performance over 50 GHz, the generated RF power achieved is expected to be over 15 dBm. This performance is exceptional considering the photodiode is fully integrated into a hermetic package designed for 65 GHz. Improvements in the coplanar waveguide (CPW) transmission line and flip-chip bonding design were integral in achieving the higher saturation at the higher bandwidth performance. Further development is required to achieve a >100 GHz packaged photodetector module.
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Steven Estrella, Kenneth Hay, Jenna Campbell, Brian Maertz, Quinglong Li, Keye Sun, Andreas Beling, Leif Johansson, Daniel Renner, Milan Mashanovitch, "High-power InGaAs/InP MUTC photodetector modules for RF photonics links and ROF", Proc. SPIE 10128, Broadband Access Communication Technologies XI, 101280M (28 January 2017); doi: 10.1117/12.2253346; https://doi.org/10.1117/12.2253346
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