7 November 2016 Fabrication of the new structure 980nm VCSEL
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Proceedings Volume 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016; 101410H (2016) https://doi.org/10.1117/12.2257053
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held July 2016, 2016, Changchun, China
Abstract
In this paper, the new structure of 980nm VCSEL was designed and fabricated in order to improve thermal problem and photo-electricity characteristic. From the point of view reduced equivalent resistance, P-side electrode was designed as intra-cavity contact structure. The VCSEL with conventional flip bottom emission structure and intra-cavity contact structure have been fabricated with the same aperture and tested comparatively. the new structure has a differential resistance of 21Ω, but the conventional structure has a differential resistance of 25.5Ω. The tested results showed that this new-type structure VCSEL is expected to improve the thermal characteristics of the device and the opto-electric characteristics.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Feng, Yuan Feng, Guojun Liu, Guojun Liu, Yongqin Hao, Yongqin Hao, Changling Yan, Changling Yan, Jiabin Zhang, Jiabin Zhang, Yang Li, Yang Li, Zaijin Li, Zaijin Li, } "Fabrication of the new structure 980nm VCSEL", Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410H (7 November 2016); doi: 10.1117/12.2257053; https://doi.org/10.1117/12.2257053
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