7 November 2016 Study on the etching process GaAs-based VCSEL
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Proceedings Volume 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016; 101410I (2016) https://doi.org/10.1117/12.2257056
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held July 2016, 2016, Changchun, China
Abstract
Wet etching process is a key technology in fabrication of VCSEL and their array in order to improve opto-electric characteristics of high-power VCSEL, devices with multi-ring distribution hole VCSEL is fabricated. The H3PO4 etching solution was used in the wet etching progress and etching rate is studied by changing etching solution concentration and etching time. The optimum technological conditions were determined by studying the etching morphology and etching depth of the GaAs-VCSEL. The tested results show that the complete morphology and the appropriate depth can be obtained by using the concentration ratio of 1:1:10, which can meet the requirements of GaAs-based VCSEL micro- structure etching process.
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Yuan Feng, Yuan Feng, Guojun Liu, Guojun Liu, Yongqin Hao, Yongqin Hao, Changling Yan, Changling Yan, Jiabin Zhang, Jiabin Zhang, Yang Li, Yang Li, Zaijin Li, Zaijin Li, } "Study on the etching process GaAs-based VCSEL", Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410I (7 November 2016); doi: 10.1117/12.2257056; https://doi.org/10.1117/12.2257056
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