7 November 2016 Simulation of multiplying electron distribution in electron multiplier layer for EBAPS
Author Affiliations +
Proceedings Volume 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016; 101410W (2016) https://doi.org/10.1117/12.2249736
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held July 2016, 2016, Changchun, China
Abstract
The multiplying electron distribution within the electron multiplier layer for electron bombarded active pixel sensor (EBAPS) was simulated. The photoelectron scatting trajectories in electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. According to semiconductor theory, the influence factors (the incident electron energy, depth and beam diameter) how affecting the energy loss rate were studied. Therefore, the photoelectron scatting trajectories and multiplying electron distribution in electron multiplier layer can be simulated, which will provide theoretical basis to further simulate the charge collection efficiency of EBAPS.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xue Piao, Xue Piao, Feng Shi, Feng Shi, Jin Song, Jin Song, Ye Li, Ye Li, Qingduo Duanmu, Qingduo Duanmu, Chunyang Liu, Chunyang Liu, De Song, De Song, } "Simulation of multiplying electron distribution in electron multiplier layer for EBAPS", Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410W (7 November 2016); doi: 10.1117/12.2249736; https://doi.org/10.1117/12.2249736
PROCEEDINGS
5 PAGES


SHARE
Back to Top