23 December 2016 Optical properties of GaAs-based LED with Fresnel structure in the surface
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Proceedings Volume 10142, 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; 101421P (2016) https://doi.org/10.1117/12.2264454
Event: 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2016, Jasna, Slovakia
Abstract
This contribution presents implementation of one dimensional Fresnel structure in surface emitting part of the AlGaAs/GaAs multi-quantum well light emitting diode (LED).The structure consists in drilled lines distributed with square root of distance in order to obtain structures with different foci. First structure was prepared by electron beam lithography and etched directly in the emitting surface using reactive-ion etching. Second structure was prepared in the surface of thin PDMS membrane that can be stack directly on the emitting surface. The membrane is fabricated using dip in laser lithography combined with PDMS embossing. Implementation of such Fresnel structures leads in modification of LED far-field what was proved by goniophotometer measurements.
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Ivana Lettrichova, Ivana Lettrichova, Dusan Pudis, Dusan Pudis, Agata Laurencikova, Agata Laurencikova, Peter Gaso, Peter Gaso, Lubos Suslik, Lubos Suslik, Daniel Jandura, Daniel Jandura, Jana Durisova, Jana Durisova, Jozef Novak, Jozef Novak, } "Optical properties of GaAs-based LED with Fresnel structure in the surface ", Proc. SPIE 10142, 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 101421P (23 December 2016); doi: 10.1117/12.2264454; https://doi.org/10.1117/12.2264454
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