Proceedings Volume 10143 is from: Logo
Feb 26 - Mar 2 2017
San Jose, California, United States
Front Matter: Volume 10143
Proc. SPIE 10143, Front Matter: Volume 10143, 1014301(5 May 2017);doi: 10.1117/12.2279234
Keynote Session
Proc. SPIE 10143, Progress in EUV lithography toward manufacturing, 1014306(24 March 2017);doi: 10.1117/12.2264043
EUV Materials I: Metal-Based EUV Resists: Joint Session with Conferences 10146 and 10143
Proc. SPIE 10143, Antimony photoresists for EUV lithography: mechanistic studies, 1014307(31 March 2017);doi: 10.1117/12.2258119
Proc. SPIE 10143, Nanoparticle photoresist studies for EUV lithography, 1014308(24 March 2017);doi: 10.1117/12.2258187
Proc. SPIE 10143, Advanced development techniques for metal-based EUV resists, 1014309(31 March 2017);doi: 10.1117/12.2258126
EUV Materials II: Fundamentals I: Joint Session with Conferences 10146 and 10143
Proc. SPIE 10143, Absorption coefficient and exposure kinetics of photoresists at EUV, 101430A(24 March 2017);doi: 10.1117/12.2257240
Proc. SPIE 10143, Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration, 101430B(24 March 2017);doi: 10.1117/12.2258063
Proc. SPIE 10143, Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner, 101430D(24 March 2017);doi: 10.1117/12.2258025
Proc. SPIE 10143, Line-edge roughness performance targets for EUV lithography, 101430E(24 March 2017);doi: 10.1117/12.2258660
Proc. SPIE 10143, Mix-and-match considerations for EUV insertion in N7 HVM, 101430F(24 March 2017);doi: 10.1117/12.2258674
Proc. SPIE 10143, The future of EUV lithography: enabling Moore's Law in the next decade, 101430G(27 March 2017);doi: 10.1117/12.2261079
Proc. SPIE 10143, Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance, 101430I(24 March 2017);doi: 10.1117/12.2259964
EUV Mask Inspection and Imaging: Joint Session with Conferences 10143 and 10145
Proc. SPIE 10143, Actinic review of EUV masks: performance data and status of the AIMS EUV system, 101430J(24 March 2017);doi: 10.1117/12.2261662
Proc. SPIE 10143, Printability and actinic AIMS review of programmed mask blank defects, 101430K(24 March 2017);doi: 10.1117/12.2260053
EUV Optics and Pellicle
Proc. SPIE 10143, Novel membrane solutions for the EUV pellicle: better or not?, 101430L(24 March 2017);doi: 10.1117/12.2257891
Proc. SPIE 10143, Impact of tool design on defect detection sensitivity for EUV actinic blank inspection, 101430M(24 March 2017);doi: 10.1117/12.2260193
Proc. SPIE 10143, High-NA metrology and sensing on Berkeley MET5, 101430N(27 March 2017);doi: 10.1117/12.2261893
Proc. SPIE 10143, Investigating surface structures by EUV scattering, 101430P(24 March 2017);doi: 10.1117/12.2258044
Resist Advances and Integration
Proc. SPIE 10143, Improvements in resist performance towards EUV HVM, 101430Q(27 March 2017);doi: 10.1117/12.2257415
Proc. SPIE 10143, Exploring the readiness of EUV photo materials for patterning advanced technology nodes, 101430R(24 March 2017);doi: 10.1117/12.2258220
Proc. SPIE 10143, State-of-the-art EUV materials and processes for the 7nm node and beyond, 101430T(27 March 2017);doi: 10.1117/12.2260153
Proc. SPIE 10143, High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL, 101430U(7 April 2017);doi: 10.1117/12.2261741
Proc. SPIE 10143, Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography, 101430V(24 March 2017);doi: 10.1117/12.2258098
Resist Modeling
Proc. SPIE 10143, Mechanisms of EUV exposure: electrons and holes, 101430W(27 March 2017);doi: 10.1117/12.2258321
Proc. SPIE 10143, Novel EUV photoresist for sub-7nm node (Conference Presentation), 101430X();doi: 10.1117/12.2258164
Proc. SPIE 10143, Driving down defect density in composite EUV patterning film stacks, 101430Y(28 March 2017);doi: 10.1117/12.2260146
Proc. SPIE 10143, Lithographic stochastics: Beyond 3sigma, 101430Z(24 March 2017);doi: 10.1117/12.2264046
Masks I
Proc. SPIE 10143, Reducing EUV mask 3D effects by alternative metal absorbers, 1014310(24 March 2017);doi: 10.1117/12.2257929
Proc. SPIE 10143, N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature's primary and 1st self-image, 1014311(24 March 2017);doi: 10.1117/12.2257463
Proc. SPIE 10143, Investigation of alternate mask absorbers in EUV lithography, 1014312(27 March 2017);doi: 10.1117/12.2258266
Proc. SPIE 10143, Vote-taking for EUV lithography: a radical approach to mitigate mask defects, 1014313(24 March 2017);doi: 10.1117/12.2258656
Proc. SPIE 10143, Reticle enhancement techniques toward iN7 metal2, 1014314(24 March 2017);doi: 10.1117/12.2258003
Masks II
Proc. SPIE 10143, Considerations for pattern placement error correction toward 5nm node, 1014315(27 March 2017);doi: 10.1117/12.2258210
Proc. SPIE 10143, Enabling full field physics based OPC via dynamic model generation, 1014316(24 March 2017);doi: 10.1117/12.2261222
Proc. SPIE 10143, Rigorous 3D electromagnetic simulation of ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask, 1014317(24 March 2017);doi: 10.1117/12.2260412
Patterning I
Proc. SPIE 10143, Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform, 1014318(24 March 2017);doi: 10.1117/12.2258005
Proc. SPIE 10143, Integrated approach to improving local CD uniformity in EUV patterning, 1014319(24 March 2017);doi: 10.1117/12.2258192
Proc. SPIE 10143, Comprehensive analysis of line-edge and line-width roughness for EUV lithography, 101431A(24 March 2017);doi: 10.1117/12.2258194
Proc. SPIE 10143, Study on restricting factors of practical k1 limit in 0.33NA EUV lithography, 101431B(5 May 2017);doi: 10.1117/12.2258144
Proc. SPIE 10143, New methodologies for lower-K1 EUV OPC and RET optimization, 101431C(24 March 2017);doi: 10.1117/12.2258186
Proc. SPIE 10143, Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer, 101431D(24 March 2017);doi: 10.1117/12.2258565
Patterning II
Proc. SPIE 10143, Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer, 101431E(27 March 2017);doi: 10.1117/12.2260441
Proc. SPIE 10143, Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production, 101431F(24 March 2017);doi: 10.1117/12.2258642
Proc. SPIE 10143, Single-expose patterning development for EUV lithography, 101431G(24 March 2017);doi: 10.1117/12.2261216
Proc. SPIE 10143, Single-nm resolution approach by applying DDRP and DDRM, 101431H(24 March 2017);doi: 10.1117/12.2258180
Proc. SPIE 10143, Scaling LPP EUV sources to meet high volume manufacturing requirements (Conference Presentation), 101431I();doi: 10.1117/12.2258628
Proc. SPIE 10143, Performance of 250W high-power HVM LPP-EUV source, 101431J(27 March 2017);doi: 10.1117/12.2256652
Proc. SPIE 10143, High-radiance LDP source for mask inspection and beam line applications (Conference Presentation), 101431L();doi: 10.1117/12.2258139
Proc. SPIE 10143, Free-electron laser emission architecture impact on EUV lithography, 101431M(31 March 2017);doi: 10.1117/12.2260452
Posters: Inspection
Proc. SPIE 10143, RESCAN: an actinic lensless microscope for defect inspection of EUV reticles, 101431O(24 March 2017);doi: 10.1117/12.2258086
Proc. SPIE 10143, Arc-shaped slit effect of EUV lithography with anamorphic high-NA system in terms of critical dimension variation, 101431P(24 March 2017);doi: 10.1117/12.2258188
Proc. SPIE 10143, A two-step method for fast and reliable EUV mask metrology, 101431Q(27 March 2017);doi: 10.1117/12.2259961