Presentation + Paper
31 March 2017 Advanced development techniques for metal-based EUV resists
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Abstract
Pure thin-films of unimolecular organometallic photoresists were lithographically evaluated using extreme ultraviolet light (EUV, λ = 13.5 nm) and developed using solutions containing carboxylic acids. Optimization of development solutions used with a cobalt-oxalate EUV resist (NP1, 2) led to a switch in lithographic tone from negative to positive. Additional optimization led to an improvement in top loss (35 to 7%) with development in cyclohexanone and 2-butanone, respectively. We saw a drastic improvement in photo-speed (Emax = 5 mJ/cm2) and contrast of the negative-tone imaging with development in certain acidic solutions. Additionally, carboxylic acid solutions provide excellent development conditions for resists that we, in the past, have been unable to successfully develop.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jodi Hotalen, Michael Murphy, William Earley, Michaela Vockenhuber, Yasin Ekinci, Daniel A. Freedman, and Robert L. Brainard "Advanced development techniques for metal-based EUV resists", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014309 (31 March 2017); https://doi.org/10.1117/12.2258126
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Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Cobalt

Photoresist developing

Extreme ultraviolet

Photoresist materials

Lithography

Extreme ultraviolet lithography

Light emitting diodes

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