24 March 2017 Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration
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Abstract
Extreme ultraviolet (EUV) lithography at 13.5 nm stands at the crossroads of next generation patterning technology for high volume manufacturing of integrated circuits. Photo resist models that form the part of overall pattern transform model for lithography play a vital role in supporting this effort. The physics and chemistry of these resists must be understood to enable the construction of accurate models for EUV Optical Proximity Correction (OPC). In this study, we explore the possibility of improving EUV photo-resist models by directly correlating the parameters obtained from experimentally measured atomic scale physical properties; namely, the effect of interaction of EUV photons with photo acid generators in standard chemically amplified EUV photoresist, and associated electron energy loss events. Atomic scale physical properties will be inferred from the measurements carried out in Electron Resist Interaction Chamber (ERIC). This study will use measured physical parameters to establish a relationship with lithographically important properties, such as line edge roughness and CD variation. The data gathered from these measurements is used to construct OPC models of the resist.
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Yudhishthir Kandel, Jonathan Chandonait, Lawrence S. Melvin, Sajan Marokkey, Qiliang Yan, Steven Grzeskowiak, Benjamin Painter, Gregory Denbeaux, "Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430B (24 March 2017); doi: 10.1117/12.2258063; https://doi.org/10.1117/12.2258063
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