24 March 2017 Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner
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With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph).

Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls.

The NXE:3400B also offers full support for reticle pellicles.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last, "Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430D (24 March 2017); doi: 10.1117/12.2258025; https://doi.org/10.1117/12.2258025


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