24 March 2017 Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner
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Abstract
With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph).

Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls.

The NXE:3400B also offers full support for reticle pellicles.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark van de Kerkhof, Mark van de Kerkhof, Hans Jasper, Hans Jasper, Leon Levasier, Leon Levasier, Rudy Peeters, Rudy Peeters, Roderik van Es, Roderik van Es, Jan-Willem Bosker, Jan-Willem Bosker, Alexander Zdravkov, Alexander Zdravkov, Egbert Lenderink, Egbert Lenderink, Fabrizio Evangelista, Fabrizio Evangelista, Par Broman, Par Broman, Bartosz Bilski, Bartosz Bilski, Thorsten Last, Thorsten Last, } "Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430D (24 March 2017); doi: 10.1117/12.2258025; https://doi.org/10.1117/12.2258025
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