24 March 2017 Mix-and-match considerations for EUV insertion in N7 HVM
Author Affiliations +
An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuemei Chen, Xuemei Chen, Allen Gabor, Allen Gabor, Pavan Samudrala, Pavan Samudrala, Sheldon Meyers, Sheldon Meyers, Erik Hosler, Erik Hosler, Richard Johnson, Richard Johnson, Nelson Felix, Nelson Felix, } "Mix-and-match considerations for EUV insertion in N7 HVM", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430F (24 March 2017); doi: 10.1117/12.2258674; https://doi.org/10.1117/12.2258674

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