24 March 2017 Mix-and-match considerations for EUV insertion in N7 HVM
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Abstract
An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.
Conference Presentation
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Xuemei Chen, Xuemei Chen, Allen Gabor, Allen Gabor, Pavan Samudrala, Pavan Samudrala, Sheldon Meyers, Sheldon Meyers, Erik Hosler, Erik Hosler, Richard Johnson, Richard Johnson, Nelson Felix, Nelson Felix, } "Mix-and-match considerations for EUV insertion in N7 HVM", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430F (24 March 2017); doi: 10.1117/12.2258674; https://doi.org/10.1117/12.2258674
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