27 March 2017 The future of EUV lithography: enabling Moore's Law in the next decade
Author Affiliations +
Proceedings Volume 10143, Extreme Ultraviolet (EUV) Lithography VIII; 101430G (2017); doi: 10.1117/12.2261079
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States
Abstract
While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their development activities on a EUV exposure tool with Numerical Aperture greater than 0.5. The purpose of this scanner, targeting a resolution of 8nm, is to extend Moore’s law throughout the next decade.

A novel, anamorphic lens design, has been developed to provide the required Numerical Aperture; this lens will be paired with new, faster stages and more accurate sensors enabling Moore’s law economical requirements, as well as the tight focus and overlay control needed for future process nodes.

The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling, and possibly in the metrology concepts.

Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution.

This paper presents an overview of the key technology innovations and infrastructure requirements for the next generation EUV systems.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Conference Presentation
Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura, "The future of EUV lithography: enabling Moore's Law in the next decade", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430G (27 March 2017); doi: 10.1117/12.2261079; http://dx.doi.org/10.1117/12.2261079
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KEYWORDS
Semiconducting wafers

Extreme ultraviolet

Extreme ultraviolet lithography

Photomasks

EUV optics

Lens design

Reflectivity

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