24 March 2017 SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
Author Affiliations +
The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent M2 layer. With these pitches, the iN7 node is an ‘aggressive’ full-scaled N7, corresponding to IDM N7, or foundry N5.

Even in a 1D design style, single exposure of the 16 nm half-pitch M2 layer is very challenging for EUV lithography, because of its tight tip-to-tip configurations. Therefore, the industry is considering the hybrid use of ArFi-based SAQP combined with EUV Block as an alternative to EUV single exposure. As a consequence, the EUV Block layer may be one of the first layers to adopt EUV lithography in HVM.

In this paper, we report on the imec iN7 SAQP + Block litho performance and process integration, targeting the M2 patterning for a 7.5 track logic design. The Block layer is exposed on an ASML NXE:3300 EUV-scanner at imec, using optimized illumination conditions and state-of-the-art metal-containing negative tone resist (Inpria). Subsequently, the SAQP and block structures are characterized in a morphological study, assessing pattern fidelity and CD/EPE variability. The work is an experimental feasibility study of EUV insertion, for SAQP + Block M2 patterning on an industry-relevant N5 use-case.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joost Bekaert, Paolo Di Lorenzo, Ming Mao, Stefan Decoster, Stéphane Larivière, Joern-Holger Franke, Victor M. Blanco Carballo, Bogumila Kutrzeba Kotowska, Frederic Lazzarino, Emily Gallagher, Eric Hendrickx, Philippe Leray, R. Ryoung-han Kim, Greg McIntyre, Paul Colsters, Friso Wittebrood, Joep van Dijk, Mark Maslow, Vadim Timoshkov, and Ton Kiers "SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430H (24 March 2017); doi: 10.1117/12.2258004; https://doi.org/10.1117/12.2258004

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