24 March 2017 Printability and actinic AIMS review of programmed mask blank defects
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Abstract
We report on the printability, mitigation and actinic mask level review of programmed substrate blank pit and bump defects in a EUV lithography test mask. We show the wafer printing behavior of these defects exposed with an NXE:3300 EUV lithography scanner and the corresponding mask level actinic review using the AIMSTM tool. We will show which categories of these blank substrate defects print on wafer and how they can be mitigated by hiding these defects under absorber lines. Furthermore we show that actinic AIMSTM mask review images of these defects, in combination with a simple thresholded resist transfer model, can accurately predict their wafer printing profiles. We also compare mask level actinic AIMSTM to top down mask SEM review in their ability to detect these defects.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erik Verduijn, Erik Verduijn, Pawitter Mangat, Pawitter Mangat, Obert Wood, Obert Wood, Jed Rankin, Jed Rankin, Yulu Chen, Yulu Chen, Francis Goodwin, Francis Goodwin, Renzo Capelli, Renzo Capelli, Sascha Perlitz, Sascha Perlitz, Dirk Hellweg, Dirk Hellweg, Ravi Bonam, Ravi Bonam, Shravan Matham, Shravan Matham, Nelson Felix, Nelson Felix, Daniel Corliss, Daniel Corliss, } "Printability and actinic AIMS review of programmed mask blank defects", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430K (24 March 2017); doi: 10.1117/12.2260053; https://doi.org/10.1117/12.2260053
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