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28 March 2017 Driving down defect density in composite EUV patterning film stacks
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Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL.

In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luciana Meli, Karen Petrillo, Anuja De Silva, John Arnold, Nelson Felix, Richard Johnson, Cody Murray, Alex Hubbard, Danielle Durrant, Koichi Hontake, Lior Huli, Corey Lemley, Dave Hetzer, Shinichiro Kawakami, and Koichi Matsunaga "Driving down defect density in composite EUV patterning film stacks", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430Y (28 March 2017);


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