In this paper, we screen absorber by n and k values. In the process, we introduce phasor notation in order to gain insight into the behavior of the absorber and try to understand the metrics. We investigate intrinsic contrast and image blur due to monopole image shift.
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Martin Burkhardt, "Investigation of alternate mask absorbers in EUV lithography," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014312 (27 March 2017);