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Presentation + Paper
24 March 2017 Vote-taking for EUV lithography: a radical approach to mitigate mask defects
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Vote-taking lithography sums up N mask images, each at 1/N dose, to mitigate the mask defects on each individual mask. The fundamental assumption is that the mask defects do not correlate in position from mask to mask, and so each individual defect will be blended with good images from the other N-1 masks. This paper will explore vote-taking for EUV lithography with both simulation and experimental results. PROLITH simulations will show the size of defects that can be healed for different N, the number of masks. SEM images of NXE 3300 exposures will be shown that are similar to those predicted from simulation. The implementation of vote-taking lithography for High Volume Manufacturing has huge practical and economic barriers. Some expose tool capabilities that could enable vote-taking lithography will be discussed. Besides defect mitigation, we briefly speculate on other possible imaging benefits opened up by voting with several exposure passes.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy A. Brunner, Melih Ozlem, Geng Han, Jed Rankin, Obert Wood, and Erik Verduijn "Vote-taking for EUV lithography: a radical approach to mitigate mask defects", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014313 (24 March 2017);


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