24 March 2017 Reticle enhancement techniques toward iN7 metal2
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Abstract
The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent metal layers1. With these pitches, the iN7 node is an ‘aggressive’ full-scaled N7, corresponding to IDM N7, or foundry N5.

Regarding the metal 2 layer, imec is evaluating two integration approaches: EUV single print and SAQP+EUV Block. Extensive work is reported on both approaches2,3. The work detailed in this paper will deal about the computational work done prior to tape-out for the EUV direct print option.

We will discuss the EUV source mask optimization for an ASML NXE:3300 EUV scanner. Afterwards we will shortly touch upon OPC compact modeling and more extensively on OPC itself. Based on the current design rules and MRC, printability checks indicate that only limited process windows are obtained. We propose ways to improve the printability through MRC and design. Applying those changes can potentially lead to a sufficient process window.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Gillijns, L. E. Tan, Y. Drissi, V. Blanco, D. Trivkovic, R. H. Kim, E. Gallagher, G. McIntyre, "Reticle enhancement techniques toward iN7 metal2", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014314 (24 March 2017); doi: 10.1117/12.2258003; https://doi.org/10.1117/12.2258003
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