27 March 2017 Considerations for pattern placement error correction toward 5nm node
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Abstract
Multi-patterning has been adopted widely in high volume manufacturing as 193 immersion extension, and it becomes realistic solution of nano-order scaling. In fact, it must be key technology on single directional (1D) layout design [1] for logic devise and it becomes a major option for further scaling technique in SAQP. The requirement for patterning fidelity control is getting savior more and more, stochastic fluctuation as well as LER (Line edge roughness) has to be micro-scopic observation aria.

In our previous work, such atomic order controllability was viable in complemented technique with etching and deposition [2]. Overlay issue form major potion in yield management, therefore, entire solution is needed keenly including alignment accuracy on scanner and detectability on overlay measurement instruments. As EPE (Edge placement error) was defined as the gap between design pattern and contouring of actual pattern edge, pattern registration in single process level must be considerable. The complementary patterning to fabricate 1D layout actually mitigates any process restrictions, however, multiple process step, symbolized as LELE with 193-i, is burden to yield management and affordability. Recent progress of EUV technology is remarkable, and it is major potential solution for such complicated technical issues. EUV has robust resolution limit and it must be definitely strong scaling driver for process simplification. On the other hand, its stochastic variation such like shot noise due to light source power must be resolved with any additional complemented technique.

In this work, we examined the nano-order CD and profile control on EUV resist pattern and would introduce excellent accomplishments.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidetami Yaegashi, Hidetami Yaegashi, Kenichi Oyama, Kenichi Oyama, Arisa Hara, Arisa Hara, Sakurako Natori, Sakurako Natori, Shohei Yamauchi, Shohei Yamauchi, Masatoshi Yamato, Masatoshi Yamato, Kyohei Koike, Kyohei Koike, Mark John Maslow, Mark John Maslow, Vadim Timoshkov, Vadim Timoshkov, Ton Kiers, Ton Kiers, Paolo Di Lorenzo, Paolo Di Lorenzo, Carlos Fonseca, Carlos Fonseca, } "Considerations for pattern placement error correction toward 5nm node", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014315 (27 March 2017); doi: 10.1117/12.2258210; https://doi.org/10.1117/12.2258210
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