24 March 2017 Comprehensive analysis of line-edge and line-width roughness for EUV lithography
Author Affiliations +
Abstract
Pattern transfer fidelity is always a major challenge for any lithography process and needs continuous improvement. Lithographic processes in semiconductor industry are primarily driven by optical imaging on photosensitive polymeric material (resists). Quality of pattern transfer can be assessed by quantifying multiple parameters such as, feature size uniformity (CD), placement, roughness, sidewall angles etc. Roughness in features primarily corresponds to variation of line edge or line width and has gained considerable significance, particularly due to shrinking feature sizes and variations of features in the same order. This has caused downstream processes (Etch (RIE), Chemical Mechanical Polish (CMP) etc.) to reconsider respective tolerance levels. A very important aspect of this work is relevance of roughness metrology from pattern formation at resist to subsequent processes, particularly electrical validity. A major drawback of current LER/LWR metric (sigma) is its lack of relevance across multiple downstream processes which effects material selection at various unit processes. In this work we present a comprehensive assessment of Line Edge and Line Width Roughness at multiple lithographic transfer processes. To simulate effect of roughness a pattern was designed with periodic jogs on the edges of lines with varying amplitudes and frequencies. There are numerous methodologies proposed to analyze roughness and in this work we apply them to programmed roughness structures to assess each technique’s sensitivity. This work also aims to identify a relevant methodology to quantify roughness with relevance across downstream processes.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravi Bonam, Ravi Bonam, Chi-Chun Liu, Chi-Chun Liu, Mary Breton, Mary Breton, Stuart Sieg, Stuart Sieg, Indira Seshadri, Indira Seshadri, Nicole Saulnier, Nicole Saulnier, Jeffrey Shearer, Jeffrey Shearer, Raja Muthinti, Raja Muthinti, Raghuveer Patlolla, Raghuveer Patlolla, Huai Huang, Huai Huang, } "Comprehensive analysis of line-edge and line-width roughness for EUV lithography", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431A (24 March 2017); doi: 10.1117/12.2258194; https://doi.org/10.1117/12.2258194
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Line width roughness and its control on photomask
Proceedings of SPIE (September 09 2013)
NIL defect performance toward high volume mass production
Proceedings of SPIE (March 22 2016)
Development of EUV resists based on various new materials
Proceedings of SPIE (March 25 2010)
Metrology qualification of EUV resists
Proceedings of SPIE (April 15 2010)

Back to Top