Advanced computational methods such as ILT and model-based SRAF optimization are well known to have considerable benefits in process window and resolution for low-K1 193 lithography. However, these methods have not been well studied to understand their benefits for lower-K1 EUV lithography where fabs must push EUV resolution, 2D accuracy and process window to their limits. In this paper, we investigate where inverse lithography methods can improve EUV patterning weaknesses vs. traditional OPC/RET. We first show how ILT can be used to guide a better understanding of optimal solutions for EUV mask synthesis. We then provide detailed comparisons of ILT and traditional methods on a wide range of mask synthesis applications.
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Kevin Hooker, Aram Kazarian, Xibin Zhou, Josh Tuttle, Guangming Xiao, Yunqiang Zhang, Kevin Lucas, "New methodologies for lower-K1 EUV OPC and RET optimization," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431C (24 March 2017);