27 March 2017 Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer
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Abstract
Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Lyons, Adam Lyons, David Rio, David Rio, Sook Lee, Sook Lee, Thomas Wallow, Thomas Wallow, Maxence Delorme, Maxence Delorme, Anita Fumar-Pici, Anita Fumar-Pici, Michael Kocsis, Michael Kocsis, Peter de Schepper, Peter de Schepper, Michael Greer, Michael Greer, Jason K. Stowers, Jason K. Stowers, Werner Gillijns, Werner Gillijns, Danilo De Simone, Danilo De Simone, Joost Bekaert, Joost Bekaert, } "Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431E (27 March 2017); doi: 10.1117/12.2260441; https://doi.org/10.1117/12.2260441
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