24 March 2017 Single-nm resolution approach by applying DDRP and DDRM
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Abstract
EUV lithography has been desired as the leading technology for 1x or single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off has been the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp1X nm L/S and single nm line patterning. Especially, semi iso 8nm line was successfully achieved with good LWR (2.5nm) and around 3 times aspect ratio. This single nm patterning technique also helped to enhance sensitivity about 33%. On the other hand, pillar patterning thorough CH pattern by applying DDRP also showed high resolution below 20nm pillar CD with good LCDU and high sensitivity. This new DDRP technology can be the promising approach not only for hp1Xnm level patterning but also single nm patterning in N7/N5 and beyond.
Conference Presentation
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Wataru Shibayama, Wataru Shibayama, Shuhei Shigaki, Shuhei Shigaki, Satoshi Takeda, Satoshi Takeda, Makoto Nakajima, Makoto Nakajima, Rikimaru Sakamoto, Rikimaru Sakamoto, "Single-nm resolution approach by applying DDRP and DDRM", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431H (24 March 2017); doi: 10.1117/12.2258180; https://doi.org/10.1117/12.2258180
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