A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) selfamplified spontaneous emission (SASE), (2) regenerative amplification (RAFEL), or (3) self-seeding (SS-FEL). Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provide a framework for future FEL design and enablement for EUV lithography applications.
ACCESS THE FULL ARTICLE
Erik R. Hosler, Obert R. Wood, William A. Barletta, "Free-electron laser emission architecture impact on EUV lithography," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431M (31 March 2017);