24 March 2017 First light at EBL2
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Abstract
TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS system. This paper describes the integration process and first light of the EUV source.EBL2 accepts a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility to facilitate wafer printing on scanners after exposure in EBL2. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source from Ushio. EUV intensity, spectrum, and repetition rate are all adjustable. The XPS system is now operational and accepts samples up to reticle size.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Koster, Norbert Koster, Edwin te Sligte, Edwin te Sligte, Freek Molkenboer, Freek Molkenboer, Alex Deutz, Alex Deutz, Peter van der Walle, Peter van der Walle, Pim Muilwijk, Pim Muilwijk, Wouter Mulckhuyse, Wouter Mulckhuyse, Bastiaan Oostdijck, Bastiaan Oostdijck, Christiaan Hollemans, Christiaan Hollemans, Björn Nijland, Björn Nijland, Peter Kerkhof, Peter Kerkhof, Michel van Putten, Michel van Putten, Jeroen Westerhout, Jeroen Westerhout, } "First light at EBL2", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431N (24 March 2017); doi: 10.1117/12.2257997; https://doi.org/10.1117/12.2257997
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