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27 March 2017 A two-step method for fast and reliable EUV mask metrology
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One of the major obstacles towards the implementation of extreme ultraviolet lithography for upcoming technology nodes in semiconductor industry remains the realization of a fast and reliable detection methods patterned mask defects. We are developing a reflective EUV mask-scanning lensless imaging tool (RESCAN), installed at the Swiss Light Source synchrotron at the Paul Scherrer Institut. Our system is based on a two-step defect inspection method. In the first step, a low-resolution defect map is generated by die to die comparison of the diffraction patterns from areas with programmed defects, to those from areas that are known to be defect-free on our test sample. In a later stage, a die to database comparison will be implemented in which the measured diffraction patterns will be compared to those calculated directly from the mask layout. This Scattering Scanning Contrast Microscopy technique operates purely in the Fourier domain without the need to obtain the aerial image and, given a sufficient signal to noise ratio, defects are found in a fast and reliable way, albeit with a location accuracy limited by the spot size of the incident illumination. Having thus identified rough locations for the defects, a fine scan is carried out in the vicinity of these locations. Since our source delivers coherent illumination, we can use an iterative phase-retrieval method to reconstruct the aerial image of the scanned area with – in principle – diffraction-limited resolution without the need of an objective lens. Here, we will focus on the aerial image reconstruction technique and give a few examples to illustrate the capability of the method.
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Patrick Helfenstein, Iacopo Mochi, Rajeev Rajendran, Shusuke Yoshitake, and Yasin Ekinci "A two-step method for fast and reliable EUV mask metrology", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431Q (27 March 2017);

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