24 March 2017 A study on enhancing EUV resist sensitivity
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Abstract
Studies have been carried out on developing a method for improving EUV resist sensitivity by enhancing EUV light absorption through the addition of metals having high EUV light absorption to the resist polymer in order to increase secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency[1-3]. To confirm whether the addition of metals having high EUV light absorption actually does enhance sensitivity, study efforts included transmittance measurements and sensitivity evaluations of resist samples doped with ZrO2 or TeO2 nanoparticles, which have low and high EUV light absorption, respectively, in molar quantities of 0-2 relative to PAG. The samples were subjected to EUV exposure at the NewSUBARU synchrotron radiation facility. While the ZrO2-doped resist showed no evident enhancement of sensitivity or transmittance, the TeO2-doped resist showed enhancement in both properties. Based on these results, we confirmed that the addition of metals having high EUV light absorption to the EUV resist enhances its EUV light absorption and increases secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency.
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Atsushi Sekiguchi, Atsushi Sekiguchi, Tetsuo Harada, Tetsuo Harada, Takeo Watanabe, Takeo Watanabe, } "A study on enhancing EUV resist sensitivity", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014322 (24 March 2017); doi: 10.1117/12.2255650; https://doi.org/10.1117/12.2255650
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