27 March 2017 Technology for defectivity improvement in resist coating and developing process in EUV lithography process
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Abstract
Extreme ultraviolet lithography (EUVL) technology is getting closer to high volume manufacturing phase every year. In order to enhance the yield in EUV lithography process, further improvement of defectivity is required at the moment. In this paper, optimized rinse and new dispense system (NDS) have been applied to a 24nm contact hole (CH) pattern in order to achieve defect reduction. As a result, the optimized rinse reduced approximately 70 % of residue defects. In addition, NDS for coating process exhibited 80 % defect reduction in particles in the coating films of material such as SOC, SOG, and resist.
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Yuya Kamei, Yuya Kamei, Takahiro Shiozawa, Takahiro Shiozawa, Shinichiro Kawakami, Shinichiro Kawakami, Hideo Shite, Hideo Shite, Hiroshi Ichinomiya, Hiroshi Ichinomiya, Masashi Enomoto, Masashi Enomoto, Kathleen Nafus, Kathleen Nafus, Marc Demand, Marc Demand, Philippe Foubert, Philippe Foubert, } "Technology for defectivity improvement in resist coating and developing process in EUV lithography process", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014326 (27 March 2017); doi: 10.1117/12.2257931; https://doi.org/10.1117/12.2257931
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