24 March 2017 Key components technology update of the 250W high-power LPP-EUV light source
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Abstract
13.5nm wavelength, CO2-Sn-LPP EUV light source which is the most promising solution for the source capable of enabling high-volume-manufacturing of semiconductor devices with critical layers patterned with sub-10nm resolution. Our source incorporates unique and original technologies such as; high power short pulse CO2 laser, short wavelength solid-state pre-pulse laser, highly stabilized droplet generator, a laser-droplet shooting control system and debris mitigation technology utilizing a strong magnetic field. In this paper we present a technology update on the key components of our 250W CO2-Sn-LPP EUV light source.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasufumi Kawasuji, Yasufumi Kawasuji, Krzysztof M. Nowak, Krzysztof M. Nowak, Tsukasa Hori, Tsukasa Hori, Takeshi Okamoto, Takeshi Okamoto, Hiroshi Tanaka, Hiroshi Tanaka, Yukio Watanabe, Yukio Watanabe, Tamotsu Abe, Tamotsu Abe, Takeshi Kodama, Takeshi Kodama, Hiroaki Nakarai, Hiroaki Nakarai, Taku Yamazaki, Taku Yamazaki, Shinji Okazaki, Shinji Okazaki, Takashi Saitou, Takashi Saitou, Hakaru Mizoguchi, Hakaru Mizoguchi, Yutaka Shiraishi, Yutaka Shiraishi, } "Key components technology update of the 250W high-power LPP-EUV light source", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101432G (24 March 2017); doi: 10.1117/12.2257808; https://doi.org/10.1117/12.2257808
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