3 April 2017 Overlay control for nanoimprint lithography
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Abstract
Nanoimprint lithography (NIL) is a promising technique for fine-patterning with a lower cost than other lithography techniques such as EUV or immersion with multi-patterning. NIL has the potential of "single" patterning for both line patterns and hole patterns with a half-pitch of less than 20nm. NIL tools for semiconductor manufacturing employ die-by-die alignment system with moiré fringe detection which gives alignment measurement accuracy of below 1nm.

In this paper we describe the evaluation results of NIL the overlay performance using an up-to-date NIL tool for 300mm wafer. We show the progress of both "NIL-to-NIL" and "NIL-to-optical tool" distortion matching techniques. From these analyses based on actual NIL overlay data, we discuss the possibility of NIL overlay evolution to realize an on-product overlay accuracy to 3nm and beyond.
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Kazuya Fukuhara, Masato Suzuki, Masaki Mitsuyasu, Takuya Kono, Tetsuro Nakasugi, Yonghyun Lim, Wooyung Jung, "Overlay control for nanoimprint lithography", Proc. SPIE 10144, Emerging Patterning Technologies, 1014409 (3 April 2017); doi: 10.1117/12.2256715; https://doi.org/10.1117/12.2256715
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