21 March 2017 Pattern defect reduction and LER improvement of chemo-epitaxy DSA process
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Abstract
Directed self-assembly (DSA) has been investigated over the past few years as the candidate for next generation lithography. Especially, sub 20nm line and space patterns obtained by chemo-epitaxy process are expected to apply to DRAM active area, Logic fin and narrow metal patterns. One of the biggest advantages of DSA lines is that the pattern pitch is decided by the specific factors of the block copolymer, and it indeed the small pitch walking as a consequence. However, the generating mechanism of the DSA pattern defect is still not cleared1-4 and the line edge roughness (LER) is not overtaken self- aligned quadruple patterning (SAQP).

In this report, we present the latest results regarding the defect reduction and LER improvement work regarding chemoepitaxy line and space pattern. In addition, we introduce the result of application of chemical epitaxy process to hole pattern.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Muramatsu, Makoto Muramatsu, Takanori Nishi, Takanori Nishi, Gen You, Gen You, Yusuke Saito, Yusuke Saito, Yasuyuki Ido, Yasuyuki Ido, Noriaki Oikawa, Noriaki Oikawa, Toshikatsu Tobana, Toshikatsu Tobana, Kiyohito Ito, Kiyohito Ito, Shinya Morikita, Shinya Morikita, Takahiro Kitano, Takahiro Kitano, } "Pattern defect reduction and LER improvement of chemo-epitaxy DSA process", Proc. SPIE 10144, Emerging Patterning Technologies, 101440Q (21 March 2017); doi: 10.1117/12.2257952; https://doi.org/10.1117/12.2257952
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