31 March 2017 RLT uniformity improvement utilizing multi-scale NIL process simulation
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Technologies for pattern fabrication using imprint process are being developed for various devices. Nanoimpirnt lithography (NIL) is an attractive and promising candidate for its pattern fidelity toward finer device fabrication without using double patterning. To apply smaller pattern size device, layout dependent hotspots becomes a significant issue, so design for manufacturing (DFM) flow considering imprint process has to be prepared. In this paper, focused on fine resist spread, RLT (Residual Layer Thickness) uniformity improvement utilizing simulation is demonstrated and resist drop compliance check flow is proposed
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Sachiko Kobayashi, Ryoichi Inanami, Hirotaka Tsuda, Kazuhiro Washida, Motofumi Komori, Kyoji Yamashita, Ji-Young Im, Takuya Kono, Shimon Maeda, "RLT uniformity improvement utilizing multi-scale NIL process simulation", Proc. SPIE 10144, Emerging Patterning Technologies, 101440X (31 March 2017); doi: 10.1117/12.2258172; https://doi.org/10.1117/12.2258172

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