Metrology, Inspection, and Process Control for Microlithography XXXI
Proceedings Volume 10145 is from: Logo
Feb 26 - Mar 2 2017
San Jose, California, United States
Front Matter: Volume 10145
Proc. SPIE 10145, Front Matter: Volume 10145, 1014501(28 April 2017);doi: 10.1117/12.2279334
Keynote Session
Proc. SPIE 10145, Metrology challenges for in-line process control, 1014503(21 April 2017);doi: 10.1117/12.2264717
Hybrid Metrology
Proc. SPIE 10145, Electrical test prediction using hybrid metrology and machine learning, 1014504(12 April 2017);doi: 10.1117/12.2261091
Proc. SPIE 10145, Patterning control strategies for minimum edge placement error in logic devices, 1014505(28 March 2017);doi: 10.1117/12.2260155
Proc. SPIE 10145, Hybrid scatterometry measurement for BEOL process control, 1014506(28 March 2017);doi: 10.1117/12.2261452
Proc. SPIE 10145, The coming of age of the first hybrid metrology software platform dedicated to nanotechnologies (Conference Presentation), 1014507();doi: 10.1117/12.2258093
Proc. SPIE 10145, A hybrid solution using computational prediction and measured data to accurately determine process corrections with reduced overlay sampling, 1014508(28 March 2017);doi: 10.1117/12.2257486
Proc. SPIE 10145, Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node", 1014509(28 March 2017);doi: 10.1117/12.2258353
Proc. SPIE 10145, A complete methodology towards accuracy and lot-to-lot robustness in on-product overlay metrology using flexible wavelength selection, 101450A(28 March 2017);doi: 10.1117/12.2257662
Proc. SPIE 10145, Reaching for the true overlay in advanced nodes, 101450B(28 March 2017);doi: 10.1117/12.2260007
Proc. SPIE 10145, Image based overlay measurement improvements of 28nm FD-SOI CMOS front-end critical steps, 101450C(28 March 2017);doi: 10.1117/12.2257883
Proc. SPIE 10145, High-volume manufacturing device overlay process control, 101450D(28 March 2017);doi: 10.1117/12.2257836
Proc. SPIE 10145, In-depth analysis of indirect overlay method and applying in production environment, 101450E(28 March 2017);doi: 10.1117/12.2257963
Proc. SPIE 10145, Metrology capabilities and needs for 7nm and 5nm logic nodes, 101450G(28 March 2017);doi: 10.1117/12.2260870
Proc. SPIE 10145, Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element, 101450H(28 March 2017);doi: 10.1117/12.2257908
Proc. SPIE 10145, Designed tools for analysis of lithography patterns and nanostructures, 101450I(28 March 2017);doi: 10.1117/12.2258612
Proc. SPIE 10145, Required metrology and inspection for nanoimprint lithography, 101450J(28 March 2017);doi: 10.1117/12.2258369
Proc. SPIE 10145, High-throughput electrical characterization for robust overlay lithography control, 101450K(28 March 2017);doi: 10.1117/12.2260707
Proc. SPIE 10145, Sub-wavelength transmission and reflection mode tabletop imaging with 13nm illumination via ptychography CDI, 101450L(28 March 2017);doi: 10.1117/12.2271386
EUV Mask Inspection and Imaging: Joint Session with Conferences 10143 and 10145
Proc. SPIE 10145, Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask, 101450M(28 March 2017);doi: 10.1117/12.2257390
Proc. SPIE 10145, Towards a stand-alone high-throughput EUV actinic photomask inspection tool: RESCAN, 101450N(28 March 2017);doi: 10.1117/12.2258379
Wafer-Shape Induced Overlay
Proc. SPIE 10145, Patterned wafer geometry grouping for improved overlay control, 101450O(28 March 2017);doi: 10.1117/12.2257834
Proc. SPIE 10145, Wafer-shape metrics based foundry lithography, 101450P(28 March 2017);doi: 10.1117/12.2257799
Proc. SPIE 10145, Topography based wafer clustering for wafer level overlay correction, 101450Q(28 March 2017);doi: 10.1117/12.2259858
Process Control
Proc. SPIE 10145, In-line E-beam metrology and defect inspection: industry reflections, hybrid E-beam opportunities, recommendations and predictions, 101450R(28 March 2017);doi: 10.1117/12.2261524
Proc. SPIE 10145, Smart sampling for process control, 101450S(28 March 2017);doi: 10.1117/12.2258031
Proc. SPIE 10145, A new method for wafer quality monitoring using semiconductor process big data, 101450T(28 March 2017);doi: 10.1117/12.2256435
Proc. SPIE 10145, Combined process window monitoring for critical features, 101450U(28 March 2017);doi: 10.1117/12.2259910
Proc. SPIE 10145, Computational overlay metrology with adaptive data analytics, 101450V(28 March 2017);doi: 10.1117/12.2258039
Proc. SPIE 10145, Surface topography analysis and performance on post-CMP images (Conference Presentation), 101450W();doi: 10.1117/12.2258357
Proc. SPIE 10145, Advanced in-production hotspot prediction and monitoring with micro-topography, 101450X(28 March 2017);doi: 10.1117/12.2260024
Line Edge Roughness (LER)
Proc. SPIE 10145, Global minimization line-edge roughness analysis of top down SEM images, 101450Y(28 March 2017);doi: 10.1117/12.2258035
Proc. SPIE 10145, Level crossing methodology applied to line-edge roughness characterization, 101450Z(28 March 2017);doi: 10.1117/12.2258602
Proc. SPIE 10145, Multitaper and multisegment spectral estimation of line-edge roughness, 1014510(28 March 2017);doi: 10.1117/12.2258053
Proc. SPIE 10145, An OCD perspective of line edge and line width roughness metrology, 1014511(28 March 2017);doi: 10.1117/12.2258196
Proc. SPIE 10145, Framework for SEM contour analysis, 1014513(28 March 2017);doi: 10.1117/12.2258059
Proc. SPIE 10145, Robust 2D patterns process variability assessment using CD-SEM contour extraction offline metrology, 1014514(28 March 2017);doi: 10.1117/12.2257876
Proc. SPIE 10145, CD-SEM distortion quantification for EPE metrology and contour analysis, 1014515(28 March 2017);doi: 10.1117/12.2260664
Inspection and Reference Metrology
Proc. SPIE 10145, Assessing the wavelength extensibility of optical patterned defect inspection, 1014516(30 March 2017);doi: 10.1117/12.2262191
Proc. SPIE 10145, Anamorphic approach for developing hi-efficiency illumination system to inspect defects on semiconductor wafers, 1014517(28 March 2017);doi: 10.1117/12.2258162
Proc. SPIE 10145, 1.5nm fabrication of test patterns for characterization of metrological systems, 1014518(28 March 2017);doi: 10.1117/12.2257624
Proc. SPIE 10145, Fabrication of metrology test structures with helium ion beam direct write, 1014519(28 March 2017);doi: 10.1117/12.2257989
Proc. SPIE 10145, 3D-profile measurement of advanced semiconductor features by using FIB as reference metrology, 101451A(19 April 2017);doi: 10.1117/12.2257217
Optical Metrology
Proc. SPIE 10145, High-NA optical CD metrology on small in-cell targets enabling improved higher order dose control and process control for logic, 101451B(28 March 2017);doi: 10.1117/12.2260268
Proc. SPIE 10145, Complex metrology on 3D structures using multi-channel OCD, 101451C(28 March 2017);doi: 10.1117/12.2261419
Proc. SPIE 10145, Optical metrology strategies for inline 7nm CMOS logic product control, 101451D(28 March 2017);doi: 10.1117/12.2260491
Proc. SPIE 10145, Evaluating the effects of modeling errors for isolated finite 3D targets, 101451E(30 March 2017);doi: 10.1117/12.2262544
Proc. SPIE 10145, Scatterometry control for multiple electron beam lithography, 101451F(28 March 2017);doi: 10.1117/12.2261389
Proc. SPIE 10145, Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology, 101451G(28 March 2017);doi: 10.1117/12.2258659
Proc. SPIE 10145, Advanced applications of scatterometry based optical metrology, 101451H(28 March 2017);doi: 10.1117/12.2261430
3D SEM and 3D Applications
Proc. SPIE 10145, SEM image prediction based on modeling of electron-solid interaction, 101451I(28 March 2017);doi: 10.1117/12.2257661
Proc. SPIE 10145, SEM-based overlay measurement between via patterns and buried M1 patterns using high-voltage SEM, 101451J(28 March 2017);doi: 10.1117/12.2257848
Proc. SPIE 10145, High-precision CD measurement using energy-filtering SEM techniques, 101451K(28 March 2017);doi: 10.1117/12.2257205