28 March 2017 Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node"
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Abstract
In this publication the authors have investigated both theoretically and experimentally the link between line edge roughness, target noise and overlay mark fidelity. Based on previous worki , a model is presented to explain how any given edge of a printed feature could have a mean position that varies stochastically (i.e., randomly, following a normal distribution) due to lithography stochastic variation. The amount of variation is a function of the magnitude of the LER (more accurately, all the statistical properties of the LER) and the length of the feature edge. These quantities have been analytically linked to provide an estimate for the minimum line length for both optical and e-beam based overlay metrology. The model results have been compared with experimental results from wafers manufactured at IMEC on both EUV and ArF lithographic processes developed for the 10 nm node, with extrapolation to the 5 nm node.
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Michael Adel, Roel Gronheid, Chris Mack, Philippe Leray, Evgeni Gurevich, Bart Baudemprez, Dieter Vandenheuvel, Antonio Mani, Sharon Aharon, Dana Klein, Jungtae Lee, Mark D. Smith, "Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node"", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014509 (28 March 2017); doi: 10.1117/12.2258353; https://doi.org/10.1117/12.2258353
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