28 March 2017 Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element
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Abstract
A methodology to evaluate the memory cell property of STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory) with a CD-SEM (Critical Dimension-Scanning Electron Microscope) was proposed. STTMRAM is one of the promising candidates among various emerging memories, owing to its low power consumption, low latency, and excellent endurance. Meanwhile, the major issues of STT-MRAM are its small resistance window and the etching-induced damage during memory pillar formation process. The resistance variability and the damage region should be minimized to achieve the reliable operation and the size scaling. The correlation analysis between the resistance and the physical dimension was performed. It provided quantitative information required for process development and control, such as the size-independent resistance variability, the width of the damaged region, and the origin of the short failures. They are essential for the investigation of the causes for the cell-to-cell resistance variability as well as for the quantification of the damage during etching process.
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Takeyoshi Ohashi, Takeyoshi Ohashi, Atsuko Yamaguchi, Atsuko Yamaguchi, Kazuhisa Hasumi, Kazuhisa Hasumi, Osamu Inoue, Osamu Inoue, Masami Ikota, Masami Ikota, Gian Lorusso, Gian Lorusso, Gabriele Luca Donadio, Gabriele Luca Donadio, Farrukh Yasin, Farrukh Yasin, Siddharth Rao, Siddharth Rao, Gouri Sankar Kar, Gouri Sankar Kar, } "Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450H (28 March 2017); doi: 10.1117/12.2257908; https://doi.org/10.1117/12.2257908
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