28 March 2017 Required metrology and inspection for nanoimprint lithography
Author Affiliations +
We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL), which is recognized as a candidate for next-generation lithography. Template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. For the RLT control, in-die RLT metrology is needed. Because the metrology requires dense sampling, optical scatterometry is the best solution owing to its ability to measure profile features nondestructively with high throughput. For in-die metrology, we have developed a new hybrid metrology that can combine key information from these complex geometries with scatterometry measurements to reduce the impact on the RLT measurement due to the layers beneath the resist. The technologies discussed here will be important when NIL is applied for IC manufacturing, as well as in the development phases of those lithography technologies.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Asano, Masafumi Asano, Hideaki Abe, Hideaki Abe, Kazuto Matsuki, Kazuto Matsuki, Ryoji Yoshikawa, Ryoji Yoshikawa, Motofumi Komori, Motofumi Komori, Takashi Hirano, Takashi Hirano, Shinji Mikami, Shinji Mikami, Yongho Kim, Yongho Kim, Eunhyuk Choi, Eunhyuk Choi, Woo-Yung Jung, Woo-Yung Jung, } "Required metrology and inspection for nanoimprint lithography", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450J (28 March 2017); doi: 10.1117/12.2258369; https://doi.org/10.1117/12.2258369

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