28 March 2017 Combined process window monitoring for critical features
Author Affiliations +
After critical lithography steps, overlay and CD are measured to determine if the wafers need to be re-worked. Traditionally, overlay metrics are applied per X/Y-direction and, a CD metric is computed independently. From design standpoint, electrical failure is based on a complex interaction between CD deviations and overlay errors. We propose a method including design constraints, where results of different measurement steps are not judged individually, but in a combined way. We illustrate this with a critical design feature consisting of a contact requiring minimum distance to a neighboring metal line, resulting in much better correlation to yield than traditional methods.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carsten Hartig, Carsten Hartig, Bernd Schulz, Bernd Schulz, Robert Melzer, Robert Melzer, Matthias Ruhm, Matthias Ruhm, Daniel Fischer, Daniel Fischer, Stefan Buhl, Stefan Buhl, Boris Habets, Boris Habets, Martin Rößiger, Martin Rößiger, Manuela Gutsch, Manuela Gutsch, } "Combined process window monitoring for critical features", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450U (28 March 2017); doi: 10.1117/12.2259910; https://doi.org/10.1117/12.2259910

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