Level crossing methodology applied to line-edge roughness characterization

Chris A. Mack; Timothy A. Brunner; Xuemei Chen; Lei Sun

doi:10.1117/12.2258602

28 March 2017 Level crossing methodology applied to line-edge roughness characterization

Chris A. Mack, Timothy A. Brunner, Xuemei Chen, Lei Sun

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Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101450Z (2017) https://doi.org/10.1117/12.2258602
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Stochastic-induced roughness of lithographic features continues to be of great concern due to its impact on semiconductor devices. In particular, rare events (large deviations in edge positions due to roughness) can cause catastrophic failure of a chip, but are hard to predict. Here, a new methodology, the level crossing method, is used to characterize the statistical behavior of edge roughness with the goal of predicting extreme events. Using experimental results from EUV lithography, the distribution of edge deviations was found to have tails significantly heavier than a normal distribution. While further work is required, these heavy tails could prove problematic when EUV is used in high volume manufacturing.

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Citation Download Citation

Chris A. Mack, Chris A. Mack, Timothy A. Brunner, Timothy A. Brunner, Xuemei Chen, Xuemei Chen, Lei Sun, Lei Sun, "Level crossing methodology applied to line-edge roughness characterization", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450Z (28 March 2017); doi: 10.1117/12.2258602; https://doi.org/10.1117/12.2258602

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