28 March 2017 Robust 2D patterns process variability assessment using CD-SEM contour extraction offline metrology
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Today’s CD-SEM metrology is challenged when it comes to measuring complex features found in patterning hotspots (like tip to tip, tip to side, necking and bridging). Metrology analysis tools allow us to extract SEM contours of a feature and convert them into a GDS format from which dimensional data can be extracted. While the CD-SEM is being used to take images, the actual measurement and the choice of what needs to be measured is done offline. Most of the time this method is used for OPC model creation but barely for process variability analysis at nominal process conditions. We showed in a previous paper [1] that it is possible to study lithography to etch transfer behavior of a hotspot using SEM contours. The goal of the current paper is to go extend this methodology to quantify process variability of 2D features using a new tooling to measure contour data.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amine Lakcher, Amine Lakcher, Bertrand Le-Gratiet, Bertrand Le-Gratiet, Julien Ducoté, Julien Ducoté, Pierre Fanton, Pierre Fanton, Ton Kiers, Ton Kiers, Jan-Willem Gemmink, Jan-Willem Gemmink, Stefan Hunsche, Stefan Hunsche, Christopher Prentice, Christopher Prentice, Maxime Besacier, Maxime Besacier, } "Robust 2D patterns process variability assessment using CD-SEM contour extraction offline metrology", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014514 (28 March 2017); doi: 10.1117/12.2257876; https://doi.org/10.1117/12.2257876

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