Fabrication of metrology test structures with helium ion beam direct write

Chien-Lin Lee; Sheng-Wei Chien; Sheng-Yung Chen; Chun-Hung Liu; Kuen-Yu Tsai; Jia-Han Li; Bor-Yuan Shew; Chit-Sung Hong; Chao-Te Lee

doi:10.1117/12.2257989

28 March 2017 Fabrication of metrology test structures with helium ion beam direct write

Chien-Lin Lee; Sheng-Wei Chien; Sheng-Yung Chen; Chun-Hung Liu; Kuen-Yu Tsai; Jia-Han Li; Bor-Yuan Shew; Chit-Sung Hong; Chao-Te Lee

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Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 1014519 (2017) https://doi.org/10.1117/12.2257989
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

The availability of metrology solutions, one of the key factors to drive leading edge semiconductor devices and processes, can be confronted with difficulties in the advanced node. For developing new metrology solutions, high quality test structures fabricated at specific sizes are needed. Conventional resist-based lithography have been utilized to manufacture such samples. However, it can encounter significant resolution difficulties or requiring complicated optimization process for advanced technology node. In this work, potential of helium ion beam direct milling (HIBDM) for fabricating metrology test structures with programmed imperfection is investigated. Features down to 5 nm are resolvable without implementing any optimization method. Preliminary results have demonstrated that HIBDM can be a promising alternative to fabricate metrology test structures for advanced metrology solutions in sub 10 nm node.

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Chien-Lin Lee, Chien-Lin Lee, Sheng-Wei Chien, Sheng-Wei Chien, Sheng-Yung Chen, Sheng-Yung Chen, Chun-Hung Liu, Chun-Hung Liu, Kuen-Yu Tsai, Kuen-Yu Tsai, Jia-Han Li, Jia-Han Li, Bor-Yuan Shew, Bor-Yuan Shew, Chit-Sung Hong, Chit-Sung Hong, Chao-Te Lee, Chao-Te Lee, } "Fabrication of metrology test structures with helium ion beam direct write", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014519 (28 March 2017); doi: 10.1117/12.2257989; https://doi.org/10.1117/12.2257989

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