19 April 2017 3D-profile measurement of advanced semiconductor features by using FIB as reference metrology
Author Affiliations +
Abstract
A novel method of sub-nanometer uncertainty for the 3D-profile measurement and LWR (Line Width Roughness) measurement by using FIB (Focused Ion Beam) processing, and TEM (Transmission Electron Microscope) and CD-SEM (Critical Dimension Scanning Electron Microscope) images measurement is proposed to standardize 3D-profile measurement through reference metrology. In this article, we apply the methodology to line profile measurements and roughness measurement of advanced FinFET (Fin-shaped Field-Effect Transistor) features. The FinFET features are horizontally sliced as a thin specimen by FIB micro sampling system. Horizontally images of the specimens are obtained then by a planar TEM. LWR is calculated from the edges positions on TEM images. Moreover, we already have demonstrated the novel on-wafer 3D-profile metrology as "FIB-to-CDSEM method" with FIB slope cut and CD-SEM measuring. Using the method, a few micrometers wide on a wafer is coated and cut by 45-degree slope using FIB tool. Then, the wafer is transferred to CD-SEM to measure the cross section image by top down CD-SEM measurement. We applied FIB-to-CDSEM method to a CMOS image sensor feature. The 45-degree slope cut surface is observed using AFM. The surface profile of slope cut surface and line profiles are analyzed for improving the accuracy of FIB-to-CDSEM method.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Takamasu, Kiyoshi Takamasu, Yuuki Iwaki, Yuuki Iwaki, Satoru Takahashi, Satoru Takahashi, Hiroki Kawada, Hiroki Kawada, Masami Ikota, Masami Ikota, } "3D-profile measurement of advanced semiconductor features by using FIB as reference metrology", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451A (19 April 2017); doi: 10.1117/12.2257217; https://doi.org/10.1117/12.2257217
PROCEEDINGS
9 PAGES + PRESENTATION

SHARE
Back to Top