28 March 2017 Complex metrology on 3D structures using multi-channel OCD
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Abstract
Device scaling has not only driven the use of measurements on more complex structures, in terms of geometry, materials, and tighter ground rules, but also the need to move away from non-patterned measurement sites to patterned ones. This is especially of concern for very thin film layers that have a high thickness dependence on structure geometry or wafer pattern factor. Although 2-dimensional (2D) sites are often found to be sufficient for process monitoring and control of very thin films, sometimes 3D sites are required to further simulate structures within the device. The measurement of film thicknesses only a few atoms thick on complex 3D sites, however, are very challenging. Apart from measuring thin films on 3D sites, there is also a critical need to measure parameters on 3D sites, which are weak and less sensitive for OCD (Optical Critical Dimension) metrology, with high accuracy and precision. Thus, state-ofthe-art methods are needed to address such metrology challenges. This work introduces the concept of Enhanced OCD which uses various methods to improve the sensitivity and reduce correlations for weak parameters in a complex measurement. This work also describes how more channels of information, when used correctly, can improve the precision and accuracy of weak, non-sensitive or complex parameters of interest.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taher Kagalwala, Taher Kagalwala, Sridhar Mahendrakar, Sridhar Mahendrakar, Alok Vaid, Alok Vaid, Paul K. Isbester, Paul K. Isbester, Aron Cepler, Aron Cepler, Charles Kang, Charles Kang, Naren Yellai, Naren Yellai, Matthew Sendelbach, Matthew Sendelbach, Mihael Ko, Mihael Ko, Ovadia Ilgayev, Ovadia Ilgayev, Yinon Katz, Yinon Katz, Lilach Tamam, Lilach Tamam, Ilya Osherov, Ilya Osherov, } "Complex metrology on 3D structures using multi-channel OCD", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451C (28 March 2017); doi: 10.1117/12.2261419; https://doi.org/10.1117/12.2261419
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