28 March 2017 High-precision CD measurement using energy-filtering SEM techniques
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Abstract
Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect- ratio (HAR) structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved by using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.
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Daisuke Bizen, Daisuke Bizen, Makoto Sakakibara, Makoto Sakakibara, Makoto Suzuki, Makoto Suzuki, Yoshinori Momonoi, Yoshinori Momonoi, Hajime Kawano, Hajime Kawano, } "High-precision CD measurement using energy-filtering SEM techniques", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451K (28 March 2017); doi: 10.1117/12.2257205; https://doi.org/10.1117/12.2257205
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