High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node

J. T. Neumann; T. Garbowski; W. Högele; T. Korb; S. Halder; P. Leray; R. Garreis; M. le Maire; D. Zeidler

doi:10.1117/12.2257980

28 March 2017 High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node

J. T. Neumann; T. Garbowski; W. Högele; T. Korb; S. Halder; P. Leray; R. Garreis; M. le Maire; D. Zeidler

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Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101451S (2017) https://doi.org/10.1117/12.2257980
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

We use the ZEISS MultiSEM to inspect patterns on separated chips of a semiconductor wafer suited for process window characterization at imec-N10 logic node. We systematically analyze the impact of imaging parameters of the MultiSEM on quantitative metrics extracted from the images, e.g., CD repeatability and relative defect capture, and demonstrate that the MultiSEM is able to image the wafer patterns, track their variations through the process conditions of the lithography scanner, and consistently find patterning defects limiting the lithographic process window.

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J. T. Neumann, J. T. Neumann, T. Garbowski, T. Garbowski, W. Högele, W. Högele, T. Korb, T. Korb, S. Halder, S. Halder, P. Leray, P. Leray, R. Garreis, R. Garreis, M. le Maire, M. le Maire, D. Zeidler, D. Zeidler, } "High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451S (28 March 2017); doi: 10.1117/12.2257980; https://doi.org/10.1117/12.2257980

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