28 March 2017 Connected component analysis of review-SEM images for sub-10nm node process verification
Author Affiliations +
Abstract
Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM’s to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandip Halder, Sandip Halder, Philippe Leray, Philippe Leray, Kaushik Sah, Kaushik Sah, Andrew Cross, Andrew Cross, Paolo Parisi, Paolo Parisi, } "Connected component analysis of review-SEM images for sub-10nm node process verification", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451Y (28 March 2017); doi: 10.1117/12.2270492; https://doi.org/10.1117/12.2270492
PROCEEDINGS
7 PAGES


SHARE
Back to Top