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28 March 2017 Connected component analysis of review-SEM images for sub-10nm node process verification
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Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM’s to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandip Halder, Philippe Leray, Kaushik Sah, Andrew Cross, and Paolo Parisi "Connected component analysis of review-SEM images for sub-10nm node process verification", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451Y (28 March 2017);

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