28 March 2017 High throughput and dense sampling metrology for process control
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Abstract
Optical metrology tool, LX530, is designed for high throughput and dense sampling metrology in semiconductor manufacture. It can inspect the dose and focus variation in the process control based on the critical dimension (CD) and line edge roughness (LER) measurement. The working principle is shown with a finite-difference-time-domain (FDTD) CD simulation. Two optical post lithography wafers, including one focus-exposure-matrix (FEM) wafer and one nominal wafer, are inspected for CD, dose and focus analysis. It is demonstrated that dose and focus can be measured independently. A data output method based on global CD uniformity (CDU), inter CDU and intra CDU is proposed to avoid the data volume issue in dense sampling whole wafer inspection.
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Lei Sun, Lei Sun, Tsunehito Kohyama, Tsunehito Kohyama, Kuniaki Takeda, Kuniaki Takeda, Hiroto Nozawa, Hiroto Nozawa, Yuji Asakawa, Yuji Asakawa, Taher Kagalwala, Taher Kagalwala, Granger Lobb, Granger Lobb, Frank Mont, Frank Mont, Xintuo Dai, Xintuo Dai, Shyam Pal, Shyam Pal, Wenhui Wang, Wenhui Wang, Jongwook Kye, Jongwook Kye, Francis Goodwin, Francis Goodwin, } "High throughput and dense sampling metrology for process control", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452D (28 March 2017); doi: 10.1117/12.2258623; https://doi.org/10.1117/12.2258623
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