28 March 2017 Monitoring of multi-patterning processes in production environment
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Abstract
Multi-patterning processes have become common in the leading-edge semiconductor industry. These processes require a good patterning uniformity over the wafer while different process steps have impact. The initial lithography steps can be nearly perfect, but the CD variation after a trim process may cause CD variation after the spacer deposition. In fact, that leads to final non-uniformity of the final CD. Monitoring and controlling the individual CD parameters is not sufficient to ensure a stable process. We define a set of new KPIs, taking all contributions into account and using macro measurement data. We show that a reliable monitoring is achieved to meet the process specifications.
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Sangjun Han, Sangjun Han, Honggoo Lee, Honggoo Lee, Jaesun Woo, Jaesun Woo, Seungyoung Kim, Seungyoung Kim, Wan-Soo Kim, Wan-Soo Kim, Stefan Buhl, Stefan Buhl, Boris Habets, Boris Habets, Seop Kim, Seop Kim, } "Monitoring of multi-patterning processes in production environment", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452M (28 March 2017); doi: 10.1117/12.2257978; https://doi.org/10.1117/12.2257978
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