Front Matter: Volume 10146
Proc. SPIE 10146, Front Matter: Volume 10146, 1014601(19 April 2017);doi: 10.1117/12.2279325
Keynote Session
EUV Materials I: Metal-Based EUV Resists: Joint Session with Conferences 10146 and 10143
Proc. SPIE 10146, A numeric model for the imaging mechanism of metal oxide EUV resists, 1014604(27 March 2017);doi: 10.1117/12.2260265
Proc. SPIE 10146, Reactivity of metal-oxalate EUV resists as a function of the central metal, 1014605(27 March 2017);doi: 10.1117/12.2258151
Proc. SPIE 10146, Photochemical conversion of tin-oxo cage compounds studied using hard x-ray photoelectron spectroscopy, 1014606(27 March 2017);doi: 10.1117/12.2257893
EUV Materials II: Fundamentals I: Joint Session with Conferences 10146 and 10143
Proc. SPIE 10146, Fundamentals of EUV resist-inorganic hardmask interactions, 1014607(27 March 2017);doi: 10.1117/12.2257933
Proc. SPIE 10146, Photoelectron scattering and acid release in EUV lithography: a simulation study (Conference Presentation), 1014608();doi: 10.1117/12.2260475
EUV Materials III: Fundamentals II
Proc. SPIE 10146, Modeling and simulation of low-energy electron scattering in organic and inorganic EUV photoresists, 1014609(27 March 2017);doi: 10.1117/12.2261434
Proc. SPIE 10146, Difference in EUV photoresist design towards reduction of LWR and LCDU, 101460A(27 March 2017);doi: 10.1117/12.2257899
Proc. SPIE 10146, Separating the optical contributions to line-edge roughness in EUV lithography using stochastic simulations, 101460B(27 March 2017);doi: 10.1117/12.2258693
Proc. SPIE 10146, An investigation on "nano-swelling" phenomenon during resist dissolution using in situ high-speed atomic force microscopy, 101460C(5 April 2017);doi: 10.1117/12.2257835
Proc. SPIE 10146, Embedded top-coat for reducing the effect out of band radiation in EUV lithography, 101460D(27 March 2017);doi: 10.1117/12.2270480
EUV Materials IV: Novel Materials and Processes
Proc. SPIE 10146, Challenges and progress in low defectivity for advanced ArF and EUV lithography processes using surface localized material technology, 101460E(27 March 2017);doi: 10.1117/12.2257956
Proc. SPIE 10146, Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure, 101460G(27 March 2017);doi: 10.1117/12.2258217
Proc. SPIE 10146, Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography, 101460H(18 April 2017);doi: 10.1117/12.2258324
Proc. SPIE 10146, Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping, 101460I(27 March 2017);doi: 10.1117/12.2258118
Patterning Materials and Etch: Joint Session with Conferences 10146 and 10149
Proc. SPIE 10146, Unexpected impact of RIE gases on lithographic films, 101460J(27 March 2017);doi: 10.1117/12.2258012
Proc. SPIE 10146, Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist, 101460K(27 March 2017);doi: 10.1117/12.2258040
Proc. SPIE 10146, High-aspect ratio silicon structures by displacement Talbot lithography and Bosch etching, 101460L(27 March 2017);doi: 10.1117/12.2258007
3D Resist Effects and Modeling: Joint Session with Conferences 10146 and 10147
Proc. SPIE 10146, Modeling of NTD resist shrinkage, 101460M(27 March 2017);doi: 10.1117/12.2257909
Proc. SPIE 10146, A novel methodology for litho-to-etch pattern fidelity correction for SADP process, 101460N(27 March 2017);doi: 10.1117/12.2258201
DSA Process and Integration: Joint Session with Conferences 10146 and 10144
Proc. SPIE 10146, Nano-defect management in directed self-assembly of block copolymers (Conference Presentation), 101460O();doi: 10.1117/12.2257936
Proc. SPIE 10146, Directed self-assembly enabled fully self-aligned via processing (Conference Presentation), 101460P();doi: 10.1117/12.2260494
Proc. SPIE 10146, Electrical study of DSA shrink process and CD rectification effect at sub-60nm using EUV test vehicle, 101460Q(13 April 2017);doi: 10.1117/12.2260454
DSA Materials and Processes: Joint Session with Conferences 10146 and 10144
Proc. SPIE 10146, Dual brush process for selective surface modification in graphoepitaxy directed self-assembly, 101460R(27 March 2017);doi: 10.1117/12.2259791
Proc. SPIE 10146, Use of sequential infiltration synthesis to improve the pattern transfer of PS-b-PLA DSA (Conference Presentation), 101460S();doi: 10.1117/12.2258132
DSA Novel Materials
Proc. SPIE 10146, High-χ block copolymers for directed self-assembly patterning without the need for topcoat or solvent annealing, 101460U(27 March 2017);doi: 10.1117/12.2257354
Proc. SPIE 10146, A high chi track-compatible DSA for sub-10nm L/S patterning , 101460W(27 March 2017);doi: 10.1117/12.2261094
Proc. SPIE 10146, Hemicellulose block copolymers made from woods for wide-range directed self-assembly lithography enabling wider range of applicable patterning size, 101460Y(27 March 2017);doi: 10.1117/12.2257625
DSA Modelling and Fundamentals
Proc. SPIE 10146, Optimized phase field models in confinement: fast and accurate simulations of directed self-assembly, 101460Z(27 March 2017);doi: 10.1117/12.2258106
Proc. SPIE 10146, Estimation of effects of thermal fluctuations in graphoepitaxy DSA of cylinder-forming block copolymers, 1014610(27 March 2017);doi: 10.1117/12.2258709
Proc. SPIE 10146, Suppression of thermal fluctuation placement errors in linear arrays of block copolymer cylinders, 1014611(27 March 2017);doi: 10.1117/12.2257687
Proc. SPIE 10146, Evaluating structure in thin block copolymer films with soft x-rays (Conference Presentation), 1014612();doi: 10.1117/12.2258047
Proc. SPIE 10146, Lamellar orientation of block copolymer using polarity switch of nitrophenyl self-assembled monolayer induced by electron beam, 1014613(27 March 2017);doi: 10.1117/12.2257953
Hardmasks and Underlayer Materials
Proc. SPIE 10146, Development of TiO2 containing hardmasks through PEALD deposition, 1014615(27 March 2017);doi: 10.1117/12.2258380
Proc. SPIE 10146, Investigation on spin-on hard mask integration, 1014616(27 March 2017);doi: 10.1117/12.2257846
Proc. SPIE 10146, Novel gap filling BARC with high chemical resistance, 1014617(27 March 2017);doi: 10.1117/12.2257664
Proc. SPIE 10146, CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks, 1014618(27 March 2017);doi: 10.1117/12.2257668
Proc. SPIE 10146, Inkjet-based adaptive planarization (Conference Presentation), 1014619();doi: 10.1117/12.2261400
Proc. SPIE 10146, Development of a robust reverse tone pattern transfer process, 101461A(27 March 2017);doi: 10.1117/12.2260455
Process Integration and Multipatterning
Proc. SPIE 10146, Pattern uniformity control in integrated structures, 101461B(27 March 2017);doi: 10.1117/12.2257868
Proc. SPIE 10146, Advanced hole patterning technology using soft spacer materials (Conference Presentation), 101461C();doi: 10.1117/12.2258667
Proc. SPIE 10146, Line end shortening and iso-dense etch bias improvement by ALD spacer shrink process, 101461D(27 March 2017);doi: 10.1117/12.2260450
Proc. SPIE 10146, Fabrication MoS2 biosensor to detect lower-concentrated area of biological molecules (Conference Presentation), 101461E();doi: 10.1117/12.2258197
Poster Session: Advanced Processes
Proc. SPIE 10146, Chemical changes in hybrid photoresists before and after exposure by in situ NEXAFS analysis, 101461F(27 March 2017);doi: 10.1117/12.2258215
Proc. SPIE 10146, Chemically amplified i-line positive resist for next-generation flat panel display, 101461G(27 March 2017);doi: 10.1117/12.2255875
Proc. SPIE 10146, High-resolution, high-throughput, CMOS-compatible electron-beam patterning, 101461H(27 March 2017);doi: 10.1117/12.2256649
Proc. SPIE 10146, Nanoimprint lithography using gas permeable template, 101461I(27 March 2017);doi: 10.1117/12.2257095
Proc. SPIE 10146, Development of novel purifiers with appropriate functional groups based on solvent polarities at bulk filtration, 101461J(27 March 2017);doi: 10.1117/12.2257388
Proc. SPIE 10146, Effects of phenolic compound addition to fractionated Novolak-based resists to improve resolution capability(2), 101461K(27 March 2017);doi: 10.1117/12.2257548
Proc. SPIE 10146, Study for new hardmask process scheme, 101461L(27 March 2017);doi: 10.1117/12.2258099
Proc. SPIE 10146, Pattern optimizing verification of self-align quadruple patterning, 101461M(5 April 2017);doi: 10.1117/12.2258154
Proc. SPIE 10146, Optimize of shrink process with X-Y CD bias on hole pattern, 101461N(27 March 2017);doi: 10.1117/12.2258221
Proc. SPIE 10146, Pattern collapse solution for asymmetric pattern, 101461P(27 March 2017);doi: 10.1117/12.2256653